Ixys igbt advantages and applications product family featuresadvantages applications extreme light punch through xpt thin wafer technology reduced thermal resistance low energy losses fast switching low tail current high current density positive temperature coefficient of v cesat battery chargers ebikes. Mar 09, 2016 selecting a suitable igbt driver basic functions of gate drivers. Low side driver bsd input logic protection circuit op. These devices are the industrys fastest switching high current igbt modules. Its igbt chip uses light punch through lpt technology and diode chip uses soft reverse recovery technology, so it. As they have faster turnoff times, they are used for inverter and chopper circuits. Ixxkx100n60c3h1 datasheetpdf 1 page ixys corporation.
Lpt structures bring several benefits to igbts, like lower saturation voltage vcesat and faster switching. Fs, lpt and spt technologies come from different manufacturers but the main idea is the same. Square rbs operating area low vce saturation voltage. Jun 09, 2018 based on the structure, the insulated gate bipolar transistor igbt can be classified as 1 punch through igbt and 2 nonpunch through igbt in this post let us discuss about the difference between punchthrough igbt and the nonpunch through igbt. This leads to the risk of parasitic turnon and leg shoot through, with consequent destruction of the entire machine. Subhashish bhattacharya, in wide bandgap semiconductor power devices, 2019. Easy paralleling due to the positive temperature coefficient of the onstate voltage rugged extreme light punch through xpt design results in. Drives applications such air conditioning systems and compressor drivers as well as in light industrial application. Isolated gate driver the basic requirement of developing igbt drivers is to ensure insulation voltage for product safety and user safety. Technology to the next power application note apt0408 igbt. Comparison of punch through igbt and nonpunch through igbt. This reference design integrates ixys corporations mixa225pf1200tsf phase leg igbt module and ixidm1401 high voltage isolated driver module into a functional high power device operated directly from a microcontroller unit mcu through a 3 kv isolation barrier. They are a preferred solution in motor drive applications.
Designing the reliable driver for the latest 450a1. Abb semiconductors ag soft punch through spt pcim nuremberg page 1 of 8 june 2000 soft punch through spt setting new standards in 1200v igbt s. Ixxkx100n60c3h1 datasheet27 pages ixys extreme light. Our integrated circuits, igbt drivers, and diodes enable compact, energyefficient acdc power supplies for a vast range of electronic products including mobile devices, tvs, pcs, appliances, led lights, smart utility meters, traction motors, dc. Abb semiconductors ag spt 1700v igbt sets benchmark on technology curve pcim page 2 of 5 nuremberg, june 2001 this paper will examine the key characteristics of the new 1700v spt igbt in detail as well as the application of the igbt and antiparallel diode in the new lopak standard module range. Soft punch through igbts in lopak modules boost power. Im building a flash circuit for an external flash for a dslr camera. Lpt structures bring several benefits to igbts, like lower saturation voltage v cesat and faster switching. With the proliferation of choices between mosfets and igbts, it is becoming increasingly difficult for todays designer to.
This article describes the features and performance characteristics of this new device. Iramx16up60b series integrated power hybrid ic for 16a, 600v. This paper introduces a new 1200v igbt from abb semiconductors. Additional searches skm300gb063 d, skm 300 gb063 d, skm 300 gb 063d, skm300 gb 063 d, skm 300gb063 d, skm 300 gb063d, skm 300gb 063 d, skm300gb 063 d, skm 300gb063d. Skm300gb063d igbt modules semitrans 3 106x62x31 part number. This igbt module, using fine planar mos gate light punch through technology hvigbt fplpt. It combines the simple gatedrive characteristics of the mosfet with the high current and. Generate gate signals to turnon or turnoff the igbt according to the command signals from the control circuit gate drivers usually provide the electrical isolation e. Manufactured through the stateoftheart genx3 igbt process and an extremelight punchthrough xpt design platform, these devices feature highcurrent handling capabilities, highspeed switching abilities, low total energy losses, and low current fall times. Extreme light punch through igbt for 2060 khz switching. Powered from a single polarity 15v power supply, this design shows the operation of two 1200v igbt devices with a maximum. Technology to the next power application note apt0408 igbt technical overview distinguishing features application tips jonathan dodge, p. Features, specifications, alternative product, product training modules, and datasheets are all available. The technology allows for the design of variablefrequency drives, which are seen as good for energyefficient systems.
I found a component by linear technology called a photoflash capacitor charger ic with integrated igbt driver. Phase leg igbt with an integrated driver module ixys power. Infineons igbt 2 family is a non punch through igbt technology with low switching losses and high robustness. Offering both low on state voltage and minimal switching loss, the igbt is well suited for motor drive control and other hard switching applications. The thin wafer technology combined with the xpt design results in a.
New discrete 600v extreme light punch through xpt igbts. Phaseleg igbt with an integrated driver module ixidm1401. Ixidm1401 high voltage isolated driver module into a functional high power device operated directly from a microcontroller unit mcu through a 3 kv isolation barrier. The highly integrated scale2 chipset reduces the component count by 80% compared to conventional solutions, thus significantly increasing reliability and. Designed for highvoltage medium power industrial applications, the kaseries, available in ratings from 50a to 400a, features a new innovative light punch through lpt chip technology while. The gatedrive circuit for gan devices is specified by various parameters like operating frequency, turnon and turnoff voltages, gatevoltage risetime, power consumption, and whether the device is being switched as a highside or low. These igbts have asymmetric voltage blocking capabilities. Download citation advanced wide cell pitch cstbts having light punchthrough lpt structures in order to improve the total performance of nonpunchthrough npt type trench igbt for the 1200. Figure 9 igbt waveforms of vce yellow and vge light blue during turnoff in tested in a portable welding machine.
This advanced hic is a combination of irs low v ceon non punch through igbt technology and the industry. An insulatedgate bipolar transistor igbt is a threeterminal power semiconductor device. Novel softpunchthrough spt 1700v igbt sets benchmark on. Gate drive circuit an overview sciencedirect topics. Manufactured through the stateoftheart genx3 igbt process and an extremelight punch through xpt design platform, these devices feature highcurrent handling capabilities, highspeed switching abilities, low total energy losses, and low current fall times. Punching through softly to understand the operation of spt igbts, we must first look at the punch through pt and nonpunch through npt igbts. In its second generation, the light punch through lpt structure has been introduced, as shown in figure 1. Powered from a single polarity 15v power supply, this design shows the operation of two 1200v igbt devices with a maximum collector. Process enhancements increase igbt efficiency for motor. Punching through softly to understand the operation of spt igbts, we must first look at the punch through pt and non punch through npt igbts.
Description extreme light punch through igbt for 2060khz switching. Square reverse bias safe operating areas rbsoa up to breakdown voltages. The phase leg igbt with integrated driver module reference design includes the following features. An alternative approach to driving parallelconnected igbt modules is to use an individual driver for each module.
Debled abb semiconductors, lenzburg, switzerland, abstract the industrial drives market continues to show dynamic growth and tough competition. In order to reduce the oscillations in the igbt, the turnoff gate resistor can be increased. A gate driver sometimes includes also the protection circuit of the. Extreme light punch through igbt for 2060 khz switching frequency. Soft punch through spt setting new standards in 1200v. The controlled punch through cpt igbt buffer is discussed as a mean for the reduction of wafer thickness down to the theoretical limit of the next generation 1200 v igbt. Punch through in a mosfet is an extreme case of channel length modulation where the depletion layers around the drain and source regions merge into a single depletion region. Its electrical characteristics and performance are showed also. A soft and efficient switch for industrial applications.
Process enhancements increase igbt efficiency for motor drive. Introduction of fieldstop shortedanode igbt digikey. Ixys reserves the right to change limits, test conditions, and dimensions. Designing the reliable driver for the latest generation igbt. Designing the reliable driver for the latest generation. They have a positive temp coefficient of vcesat, ideal for paralleling. Corporation developed a family of planar 600v xxpt extremely rugged extremely light punch. Connection of gate drivers to igbt and controller an7002 20060905 rev00 applicationnote. Irs technology offers an extremely compact, high performance ac motor driver in a single isolated package to simplify design.
Extremelight punchthrough xpt thin wafer technology. The field underneath the gate then becomes strongly dependent on the drainsource voltage, as is the drain current. Although the structure of the igbt is topologically the same as a thyristor with a mos gate mos. A typical implementation of igbt driver is shown in fig.
The insulated gate bipolar transistor igbt is a common choice for motordrive applications thanks to its high blocking voltage and low cost compared to power mosfets with similar voltage ratings. The ixa60if1200na is a 1200v xpt igbt with sonic diode and extreme light punch through xpt thin wafer technology. Browse digikeys inventory of ixxn xpt igbt series ixysigbts modules. Punchthroughigbt,npt igbt nopunchthrough,fs igbt field stop, lpt igbt light punch through and spt igbt soft punch through. Advanced wide cell pitch cstbts having light punchthrough. The phase leg igbt with integrated driver module design includes the following features. Article library process enhancements increase igbt efficiency for motor drive applications process enhancements increase igbt efficiency for motor drive applications. New gen 3 650v igbt a soft and efficient switch for. Before proceeding further, it is good to refresh about the basics of igbt. This insulated gate bipolar transistor igbt features a robust and cost effective nonpunch through npt trench construction, and provides superior performance in demanding switching applications. Jul 18, 2019 igbt takes a parasitic thyristor includes the 4layer npn structures. Ixxkx100n60c3h1 datasheet17 pages ixys extreme light. Power supply igbt gate driver mcu q1 q2 q3 q4 cdc tig welder output load stage input mains 185vac 265vac recti. The powerex 1700v igbt family was also expanded last year with the introduction of the kaseries module.
This igbt module, using fine planar mos gate light punch through. This advanced hic is a combination of irs low v ceon punch through igbt technology and the industry. Ixxk100n60c3h1ixxx100n60c3h1ixys mosfets and igbts are covered4,835,5924,931,8445,049,9615. An1001 igbt and mosfet drivers correctly calculated this application note describes the calculation of the gate drive performance figures required for a given application. Soft punch through spt setting new standards in 1200v igbt. High power density low gate drive requirement applications power inverters, ups, smps, pfc, battery chargers, welding machines, lamp ballasts and motor drives new discrete 600v extreme light punch through xpt igbts. Although designed for driving discrete and module igbts, this device offers a. The new chipset demonstrates ruggedness, low losses, good parallelabilty and soft switching edges.
This insulated gate bipolar transistor igbt features a robust and cost effective non punch through npt trench construction, and provides superior performance in demanding switching applications. Rohm semiconductor started to manufacture igbt devices in 2009. The fieldstop fs igbt provides lowersaturation voltage drop and lower switching losses versus the conventional non punch through npt igbt. Applications engineering manager advanced power technology 29 november 2004. Mc33153 single igbt gate driver the mc33153 is specifically designed as an igbt driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Ixa60if1200na ixys semiconductor, igbt single transistor. In its second generation, the light punch through lpt structure was introduced and is shown in figure 1. Its an ic that reduces the number of external components needed for charging the capacitor of the flash and it has. Xtreme light punch through xpt igbts feature 10 us short circuit withstand capability. Integrated gate drivers, igbts, and freewheeling diodes.
Furthermore, their low gate charges help minimize gate drive requirements. A gate drive circuit is an integrated circuit that accepts a low power input from a controller ic and produces the appropriate voltage and current for a power semiconductor switch. The gen4 architecture combines the trench topology with the extreme light punch through xpt fieldstop design of the gen3 to support a combination of low onstate. Igbts that are based on non punch through npt technology. The system needs igbt with low losses, high robustness and high reliability. Novel softpunchthrough spt 1700v igbt sets benchmark. Note the six large igbt driver circuits in the racks. Highvoltage insulated gate bipolar transistor modules power modules for vehicles power modules for evphev misoptm surface mount package ipm.